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1/14 october 2005 stp11nm80 - stf11nm80 stb11nm80 - STW11NM80 n-channel 800v - 0.35 ? - 11 a to-220 /fp/d 2 pak/to-247 mdmesh? mosfet table 1: general features typical r ds (on) = 0.35 ? low gate input resistance low input capacitance and gate charge best r ds (on)*qg in the industry description the mdmesh? associates the multiple drain pro - cess with the company?s powermesh? horizontal layout assuring an oustanding low on-resistance. the adoption of the company?s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competi - tion?s products. applications the 800 v mdmesh? family is very suitable for single switch applications in particular for flyback and forward converter topologies and for ignition circuits in the field of lighting. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) r ds(on) *q g i d stp11nm80 stf11nm80 stb11nm80 STW11NM80 800 v 800 v 800 v 800 v < 0.40 ? < 0.40 ? < 0.40 ? < 0.40 ? 14 ?? nc 14 ?? nc 14 ?? nc 14 ?? nc 11 a 11 a 11 a 11 a 1 2 3 1 3 1 2 3 1 2 3 to-220 d 2 pak to-247 to-220fp sales type marking package packaging stp11nm80 p11nm80 to-220 tube stf11nm80 f11nm80 to-220fp tube stb11nm80t4 b11nm80 d 2 pak tape & reel STW11NM80 w11nm80 to-247 tube rev. 2
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 2/14 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (*) limited only by the maximum temperature allowed table 4: thermal data table 5: avalanche characteristics symbol parameter value unit to-220/d 2 pak to-247 to-220fp v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20 k ? ) 800 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 11 11 (*) a i d drain current (continuous) at t c = 100c 4.7 4.7 (*) a i dm ( ) drain current (pulsed) 44 44 (*) a p tot total dissipation at t c = 25c 150 35 w derating factor 1.2 0.28 w /c t j t stg operating junction temperature storage temperature -65 to 150 c to-220/d 2 pak to-247 to-220fp unit rthj-case thermal resistance junction-case max 0.83 3.6 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = 2.5a, v dd = 50 v) 400 mj
3/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 electrical characteristics (t case =25c unless otherwise specified) table 6: on/off table 7: dynamic table 8: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10v, i d =5.5 a 0.35 0.40 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 7.5 a 8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1630 750 30 pf pf pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 2.7 ? t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 5.5 a r g = 4.7 ? v gs = 10 v (resistive load see, figure 4) 22 17 46 15 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v, i d = 11 a, v gs = 10v 43.6 11.6 21 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 11 44 a a v sd (1) forward on voltage i sd = 11 a, v gs = 0 0.86 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 50 v, t j = 25c (see test circuit, figure 5) 612 7.22 23.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 50 v, t j = 150c (see test circuit, figure 5) 970 11.25 23.2 ns c a
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 4/14 figure 3: safe operating area for d 2 pak/ to-247 / to-220 figure 4: thermal impedance for d 2 pak/ to-247 / to-220 figure 5: output characteristics figure 6: safe operating area for to-220fp figure 7: thermal impedance for to-220fp figure 8: output characteristics
5/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 figure 9: transfer characteristics figure 10: transconductance figure 11: gate charge vs gate-source voltage figure 12: normalized gate threshold voltage vs temperature figure 13: static drain-source on resistance figure 14: capacitance variations
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 6/14 figure 15: normalized on resistance vs tem - perature figure 16: source-drain forward characteris - tics figure 17: normalized bv dss vs temperature
7/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 figure 18: unclamped inductive load test cir - cuit figure 19: switching times test circuit for resistive load figure 20: test circuit for inductive load switching and diode recovery times figure 21: unclamped inductive wafeform figure 22: gate charge test circuit
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 8/14 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 10/14 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.57 0.178 0.180 a1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 d 8.89 9.02 9.40 0.350 0.355 0.370 d1 8.01 0.315 e 10.04 10.28 0.395 0.404 e 2.54 0.010 h 13.10 13.70 0.515 0.540 l 1.30 1.70 0.051 0.067 l1 1.15 1.39 0.045 0.054 l2 1.27 1.77 0.050 0.069 l4 2.70 3.10 0.106 0.122 v2 0 8 0 8 to-263 (d 2 pak) mechanical data
11/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 12/14 tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
13/14 stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 figure 23: revision history date revision description of changes 29-jul-2004 1 final document 20-oct-2005 2 modified value on figure 17
stp11nm80 - stf11nm80 - stb11nm80 - STW11NM80 14/14 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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